symbol value unit continuous reverse voltage v r 240 volts peak repetitive reverse voltage v rrm 300 volts peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i rfm 625 ma non-repetitive peak forward current at tp = 1 m si fsm 4.0 a at tp = 1 s i fsm 1.0 a power dissipation p tot 350 mw maximum junction temperature t j 150 ? storage temperature range t s ?5 to +150 ? typical thermal resistance junction to ambient air r q ja 357 c/w new product new product new product GSD2004SW small signal diodes features silicon epitaxial planar diode fast switching dual in-series diode, especially suited for applications requiring high voltage capability mechanical data case: sod-123 plastic case weight: approx. 0.01 g marking code: db6 maximum ratings and thermal characteristics ratings at 25? ambient temperature unless otherwise specified (per diode) 2/25/99 dimensions in inches and (millimeters) sod-123 .022 (0.55) max. .004 (0.1) .112 (2.85) .152 (3.85) .067 (1.70) max. .053 (1.35) min. .010 (0.25) cathode mark max. .006 (0.15) to p v i ew .140 (3.55) .100 (2.55) .055 (1.40)
GSD2004SW electrical characteristics symbol min. typ. max. unit reverse breakdown voltage at i r =100 m av br 300 - - volts leakage current at v r = 240 v i r - - 100 na at v r = 240 v, t j = 150? i r - - 100 m a forward voltage at i f = 20 ma v f - 0.83 0.87 volts at i f = 100 ma v f - - 1.00 volts capactiance c tot - - 5.0 pf at v f = v r = 0; f = 1mh z reverse recovery time i f = i a = 30 ma, i rr = 3.0 ma t rr - - 50 ns r l = 100 w ratings at 25? ambient temperature unless otherwise specified (per diode).
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